2sk3703 no.7681-1/7 features ? on-resistance r ds (on)1=20m (typ.) ? input capacitance ciss=1780pf (typ.) ? 4v drive speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 60 v gate-to-source voltage v gss 20 v drain current (dc) i d 30 a drain current (pulse) i dp pw 10 s, duty cycle 1% 120 a allowable power dissipation p d 2.0 w tc=25 c 25 w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *1 e as 135 mj avalanche current *2 i av 30 a note : * 1 v dd =20v, l=200 h, i av =30a (fig.1) * 2 l 200 h, single pulse package dimensions unit : mm (typ) 7529-001 51612 tkim tc-00002747/72506qa msim tc-00000067/61504 tsim ta-100813 sanyo semiconductors data sheet 2sk3703 n-channel silicon mosfet general-purpose switching device applications http:// semicon.sanyo.com/en/network ordering number : en7681b product & package information ? package : to-220f-3sg ? jeita, jedec : sc-67 ? minimum packing quantity : 50 pcs./magazine marking electrical connection k3703 lot no. 1 3 2 1 : gate 2 : drain 3 : source sanyo : to-220f-3sg 10.16 0.8 15.87 12.98 3.3 6.68 3.23 1.47 max 15.8 4.7 2.54 2.76 123 0.5 2.54 2.54 3.18 ( 1.0) (0.84) detail-a a emc frame 2sk3703-1e
2sk3703 no.7681-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 60 v zero-gate voltage drain current i dss v ds = 60 v, v gs =0v 1 a gate-to-source leakage current i gss v gs =16v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 1.2 2.6 v forward transfer admittance | yfs | v ds =10v, i d = 15 a 13 22 s static drain-to-source on-state resistance r ds (on)1 i d = 15 a, v gs =10v 20 26 m r ds (on)2 i d = 15 a, v gs =4v 28 40 m input capacitance ciss v ds =20v, f=1mhz 1780 pf output capacitance coss 266 pf reverse transfer capacitance crss 197 pf turn-on delay time t d (on) see fig.2 16.5 ns rise time t r 110 ns turn-off delay time t d (off) 166 ns fall time t f 144 ns total gate charge qg v ds =30v, v gs =10v, i d =30a 40 nc gate-to-source charge qgs 6.5 nc gate-to-drain ?miller? charge qgd 11.5 nc diode forward voltage v sd i s =30a, v gs =0v 1.0 1.2 v fig.1 avalanche resistance test circuit fig.2 switching time test circuit ordering information device package shipping memo 2sk3703-1e to-220f-3sg 50pcs./magazine pb free 50 10v 0v 50 v d d l 2sk3703 pw=10 s d.c. 1% p. g 50 g s d i d =15a r l =2 v dd =30v v ou t 2sk3703 v in 10v 0v v in
2sk3703 no.7681-3/7 r ds (on) -- v gs gate-to-source voltage, v gs -- v it05388 0 70 60 50 40 30 10 20 2345678910 r ds (on) -- tc case temperature, tc -- c it05389 0 60 50 40 30 20 10 --50 --25 0 25 50 75 100 125 150 -- 2 5 c 25 c tc=75 c i d =15a i d =15a, v gs =4v i d =15a, v gs =10v static-drain-to-source on-state resistance, r ds (on) -- m static-drain-to-source on-state resistance, r ds (on) -- m | y fs | -- i d forward transfer admittance, | y fs | -- s drain current, i d -- a it05390 i s -- v sd source current, i s -- a diode forward voltage, v sd -- v it05391 100 2 3 5 7 3 5 7 10 5 7 1.0 2 0.1 1.0 23 57 23 57 23 10 5 0 0.3 0.6 0.9 1.2 0.001 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 2 3 5 tc= --25 c 75 c ciss, coss, crss -- v ds ciss, coss, crss -- pf drain-to-source voltage, v ds -- v it05393 sw time -- i d drain current, i d -- a switching time, sw time -- ns it05392 10 7 2 2 3 5 100 5 3 7 5 3 2 10 1.0 0.1 5 3 2 7 5 3 2 t r t f t d (on) t d (off) v dd =30v v gs =10v v gs =0v tc=75 c 25 c --25 c 1000 100 2 3 5 7 7 2 3 5 0 5 10 15 20 25 30 crss coss ciss f=1mhz 25 c i d -- v ds drain current, i d -- a drain-to-source voltage, v ds -- v it05386 0 50 45 40 35 30 25 20 15 10 5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 2.0 1.6 1.8 i d -- v gs drain current, i d -- a gate-to-source voltage, v gs -- v it05387 0 50 45 40 35 30 25 20 15 10 5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 5.0 4.0 4.5 tc=25 c tc= --25 c -- 2 5 c tc=75 c 75 c 25 c 25 c v gs =3v 4v 6v 8v 10v v ds =10v
2sk3703 no.7681-4/7 case temperature, tc -- c p d -- tc allowable power dissipation, p d -- w it05396 0 20 40 60 80 100 120 140 160 0 35 30 25 20 15 10 5 ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w it05397 0 20 40 60 80 100 120 140 160 0 0.5 1.0 1.5 2.0 2.5 0 0 25 50 75 100 125 150 100 80 60 20 40 120 175 e as -- ta avalanche energy derating factor -- % it10478 ambient temperature, ta -- c v gs -- qg gate-to-source voltage, v gs -- v total gate charge, qg -- nc it05394 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 v ds =30v i d =30a drain-to-source voltage, v ds -- v drain current, i d -- a it16832 a s o 0.1 2 3 5 5 7 2 3 7 2 3 1.0 10 100 1000 5 7 3 5 7 2 23 57 23 57 23 57 0.1 1.0 10 100 i d =30a operatuon in this area is limited by r ds (on). tc=25 c single pulse 10 s 100 s 1ms 100ms 10ms dc operation i dp =120a(pw 10 s)
2sk3703 no.7681-5/7 magazine speci cation 2sk3703-1e
2sk3703 no.7681-6/7 outline drawing 2sk3703-1e mass (g) unit 1.8 * for reference mm
2sk3703 ps no.7681-7/7 this catalog provides information as of may, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. note on usage : since the 2sk3703 is a mosfet product, please avoid using this device in the vicinity of highly charged objects.
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